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Fault Tolerance and Yield Improvement of Embedded Memories. Designing High Performance VLSI Memories

Автор:   Boris P.
мягкая обложка
112 страниц
2009 год
Издательство:   Книга по Требованию
Цена:
2005 руб
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Описание:The work incorporates two novel circuits that significantly improve embedded memory yield and reliability. It also can be used as a supplementary material for a graduate-level course on VLSI embedded memory. Today it is not enough just to design and fabricate the embedded memory. The embedded memory is one of the vital parts of any system-on-chip. This book provides background on fault tolerance improvement theory, and gives several new solutions on how to improve reliability and enhance yield of the embedded memory in efficient ways. This book should prove useful to engineers, researchers, professionals wishing to be up to date with the recent advancements in embedded and high density memory design. Recent advances in microelectronics industry allow us to create a System-On-Chip. In order to put the System-On-Chip in mass production, the designer has to be concerned about yield and reliability of the embedded memory.


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Embedded Linux Primer: A Practical, Real-World Approach

Figure 2-3 illustrates the block size layout for a typical top boot Flash. Figure 2-3. Boot block flash architecture To modify data stored in a Flash memory array, the block in which the modified data resides must be completely erased. Even if only 1 byte in a block needs to be changed, the entire block must be erased and rewritten.[6] Flash block sizes are relatively large, compared to traditional hard-drive sector sizes. In comparison, a typical high-performance hard drive has writable sectors of 512 or 1024 bytes. The ramifications of this might be obvious: Write times for updating data in Flash memory can be many times that of a hard drive, due in part to the relatively large quantity of data that must be written back to the Flash for each update. These write cycles can take several seconds, in the worst case. Another limitation of Flash memory that must be considered is Flash memory cell write lifetime. A Flash memory cell has a limited number of write cycles before failure. Although the number of cycles is fairly large (100K cycles typical per block), it is easy to imagine a poorly designed Flash storage algorithm (or even a bug) that can quickly destroy Flash devices ...»

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